RN2105MFV,L3XHF(CT
Toshiba Semiconductor and Storage
Deutsch
Artikelnummer: | RN2105MFV,L3XHF(CT |
---|---|
Hersteller / Marke: | TAEC Product (Toshiba Electronic Devices and Storage Corporation) |
Teil der Beschreibung.: | AUTO AEC-Q PNP Q1BSR=2.2K, Q1BER |
Datenblätte: | None |
RoHs Status: | Lead free / RoHs compliant |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $0.34 |
10+ | $0.277 |
100+ | $0.1468 |
500+ | $0.0966 |
1000+ | $0.0657 |
2000+ | $0.0592 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
Spannung - Kollektor-Emitter-Durchbruch (max) | 50 V |
VCE Sättigung (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
Transistor-Typ | PNP - Pre-Biased |
Supplier Device-Gehäuse | VESM |
Serie | Automotive, AEC-Q101 |
Widerstand - Emitterbasis (R2) | 47 kOhms |
Widerstand - Basis (R1) | 2.2 kOhms |
Leistung - max | 150 mW |
Produkteigenschaften | Eigenschaften |
---|---|
Verpackung / Gehäuse | SOT-723 |
Paket | Tape & Reel (TR) |
Befestigungsart | Surface Mount |
Frequenz - Übergang | 250 MHz |
DC Stromgewinn (HFE) (Min) @ Ic, VCE | 80 @ 10mA, 5V |
Strom - Collector Cutoff (Max) | 500nA |
Strom - Kollektor (Ic) (max) | 100 mA |
Grundproduktnummer | RN2105 |
RN2105MFV,L3SOYF(A TOSHIBA
RN2105MFV TOSHIBA
TRANS PREBIAS PNP 50V 0.1A SSM
AUTO AEC-Q TR PNP Q1BSR=2.2KOHM,
TRANS PREBIAS PNP 50V 0.08A CST3
TRANS PREBIAS PNP 50V 0.1A SSM
RN2106F TOSHIBA
TRANS PREBIAS PNP 20V 0.05A CST3
TOSHIBA SOT-723VESM
TRANS PREBIAS PNP 50V 0.1A VESM
TOSHIBA NA
RN2105FT TOSHIBA
TRANS PREBIAS PNP 20V 0.05A CST3
AUTO AEC-Q TR PNP Q1BSR=4.7KOHM,
RN2105F TOSHIBA
RN2106(TE85L,F) TOSHIBA
RN2106 TOSHIBA
TRANS PREBIAS PNP 50V 0.1A VESM
TRANS PREBIAS PNP 50V 0.08A CST3
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() RN2105MFV,L3XHF(CTToshiba Semiconductor and Storage |
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